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Real-Time, No Power, Radiation Dosimeter

Low-cost, hardware-free total ionizing dose (TID) monitoring for space, defense, and nuclear applications

At a Glance

Researchers at Colorado State University have developed a novel mechanism to quantify the level of radiation exposure on a SRAM chip without any active power requirement. This mechanism can be utilized to allow devices containing SRAM chips to act as real-time dosimeters. This can eliminate the time-delay between exposure and detection that occurs with traditional dosimeters and allow already ubiquitous devices, such as smartphones, to be used for radiation monitoring and tracking. The technology has garnered strong industry interest, backed by a formal letter of support from a major global aerospace and defense prime contractor evaluating the system for platform integration.

Background

High-dose radiation monitoring is critical for space exploration, avionics, defense systems, nuclear energy, and emergency disaster response. Traditional dosimeters—such as TLDs, OSLDs, and RadFETs—are often bulky, expensive, temperature-sensitive, or require off-site reading equipment. Emerging electronic alternatives like NAND flash fail at doses above 50–100 krad(Si) due to charge-pump circuit breakdown. Consequently, there is an urgent industry demand for compact, resilient dosimeters that measure extreme radiation doses directly within embedded electronic hardware.

Overview

This technology repurposes the power-up state of standard 6-transistor (6T) commercial off-the-shelf (COTS) SRAM cells—traditionally used as digital fingerprints—to measure Total Ionizing Dose (TID). Radiation-induced positive charge trapping in gate dielectrics alters transistor threshold voltages, predictably shifting the SRAM power-up bit sequence. By comparing post-irradiation power-up states against a baseline reference state, the system calculates Hamming Distance (HD) shifts that correlate monotonically with total absorbed dose. The dosimeter demonstrates a linear response in the 5 to 100 krad(Si) dose range and remains fully operational up to at least 350 krad(Si) across multiple standard CMOS technology nodes (90nm, 150nm, 250nm).

Figure 1. The change in HD for two different types of chips exposed to radiation. As the radiation dose increases, the change in HD also increases.
Figure 2. The change in HD for two chips of the same type across lower radiation doses shows a more linear trend.

Benefits

  • Operates on standard COTS SRAM chips using native digital interfaces, eliminating the need for dedicated sensor components or custom silicon designs.
  • Remains fully functional beyond 350 krad(Si), outperforming conventional flash-memory dosimeters that fail around 50–100 krad(Si).
  • Provides direct, on-chip radiation measurement via software/firmware without off-site processing or complex calibration equipment.
  • Drastically reduces system payload weight, power consumption, and manufacturing cost by utilizing onboard system memory.
  • Exhibits predictable linearity and dose estimation errors as low as 2–3% at high dose levels in mature technology nodes (150nm and 250nm).

Applications

  • Real-time Total Ionizing Dose (TID) monitoring for satellites, space exploration payloads, and avionics systems.
  • Embedded situational awareness sensors for electronics operating in radiation-intense environments.
  • Continuous radiation monitoring in nuclear power plant containment zones, research reactors, and waste handling areas.
  • Compact, low-cost wearable or deployable dosimeters for nuclear disaster management.

Publications

A.S. Vellankanni, et al (2024) “Real-time radiation dosimeter using SRAM power-up state.” 2024 24th European Conference on Radiation and Its Effects on Components and Systems (RADECS). 10.1109/RADECS61970.2024.11298580.

Last Updated: September 2026
Close-up of an SRAM memory chip illuminated by blue and violet radiation beams.
Opportunity

Available for Exclusive Licensing
TRL: 6

IP Status

PCT/US2025/025008

Inventors

Biswajit Ray

Reference Number
2024-052
Licensing Manager

Jessy McGowan
Jessy.McGowan@colostate.edu
970-491-7100

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